Accurate potential drop sheet resistance measurements of laser-doped areas in semiconductors

Author:

Heinrich Martin12,Kluska Sven3,Binder Sebastian3,Hameiri Ziv4,Hoex Bram1,Aberle Armin G.125ORCID

Affiliation:

1. Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574, Singapore

2. NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore

3. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, D-79110 Freiburg, Germany

4. The School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney NSW 2052, Australia

5. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117456, Singapore

Funder

National University of Singapore (NUS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference36 articles.

1. Four-point potential drop measurements for materials characterization

2. Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions

3. D. Kray , M. Alemán , A. Fell , S. Hopman , K. Mayer , M. Mesec , R. Müller , G. P. Willeke , S. W. Glunz , B. Bitnar , D.H. Neuhaus , R. Lüdemann , T. Schlenker , D. Manz , A. Bentzen , E. Sauar , A. Pauchard , and B. Richerzhagen , inProceedings of the 33rd IEEE Photovoltaic Specialists Conference( San Diego, CA, 2008), pp. 1–3.

4. High-Efficiency Silicon Solar Cells With Boron Local Back Surface Fields Formed by Laser Chemical Processing

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