Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125101
Reference10 articles.
1. InGaN-based violet laser diodes
2. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
3. Gain and the threshold of three-dimensional quantum-box lasers
4. Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots
5. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
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