Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission-Reference-Cited by-同舟云学术

Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission

Published:2022-09-26 Issue:39 Volume:14 Page:45051-45058
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Yeonhwa¹²,Chu Rafael Jumar¹²,Ryu Geunhwan¹,Woo Seungwan¹³^ORCID,Lung Quang Nhat Dang¹²,Ahn Dae-Hwan¹^ORCID,Han Jae-Hoon¹^ORCID,Choi Won Jun¹,Jung Daehwan¹²^ORCID

Affiliation:

1. Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. Division of Nano & Information Technology, University of Science and Technology, Seoul 02792, South Korea

3. Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c14492

Reference27 articles.

1. InP quantum dots for dislocation-tolerant, visible light emitters on Si

2. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

3. A Review of High-Performance Quantum Dot Lasers on Silicon

4. O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

5. A hybrid silicon evanescent quantum dot laser

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