Morphology and microstructure evolution of AlxGa1−xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy-Reference-Cited by-同舟云学术

Morphology and microstructure evolution of AlxGa1−xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy

Published:2008-06 Issue:11 Volume:103 Page:113510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lu L.,Shen B.,Xu F. J.,Gao B.,Huang S.,Miao Z. L.,Qin Z. X.,Yang Z. J.,Zhang G. Y.,Zhang X. P.,Xu J.,Yu D. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2932156

Reference14 articles.

1. Review of III-nitride optoelectronic materials for light emission and detection

2. Critical issues in AlxGa1−xN growth

3. High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

4. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

5. Dislocation motion in GaN light-emitting devices and its effect on device lifetime

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2. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate;Chinese Physics B;2015-04-30

3. The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates;Applied Physics A;2012-05-31