The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates-Reference-Cited by-同舟云学术

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The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates

Published:2012-05-31 Issue:4 Volume:108 Page:857-862
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Li Lei,Liu Lei,Wang Lei,Li Ding,Song Jie,Liu Ningyang,Chen Weihua,Wang Yuzhou,Yang Zhijian,Hu Xiaodong

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-012-6984-5.pdf

Reference31 articles.

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2. S. Nakamura, N. Iwasa, M. Senoh, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995)

3. E.F. Schubert, J.K. Kim, Science 308, 1274 (2005)

4. H. Nakayama, P. Hacke, M.R.H. Khan, T. Detchprohm, K. Hiramatsu, N. Sawaki, Jpn. J. Appl. Phys., Part 2 35, L282 (1996)

5. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, M. Koike, Appl. Phys. Lett. 65, 593 (1994)

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