Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments-Reference-Cited by-同舟云学术

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

Published:2017-09-21 Issue:11 Volume:122 Page:115704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee In-Hwan¹,Polyakov A. Y.²,Smirnov N. B.²,Shchemerov I. V.²,Lagov P. B.²^ORCID,Zinov'ev R. A.²,Yakimov E. B.²³^ORCID,Shcherbachev K. D.²^ORCID,Pearton S. J.⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea University Anamro 145, Seoul 02841, South Korea

2. National University of Science and Technology MISiS, Moscow, Leninskiy pr. 4, Moscow 119049, Russia

3. Institute of Microelectronics Technology and High Purity Materials Russian Academy of Science, Chernogolovka, Moscow dist. 142432, Russia

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Defense Threat Reduction Agency (DTRA)

National Research Foundation of Korea (NRF)

Ministry of Education and Science of the Russian Federation (Minobrnauka)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5000956

Reference40 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

3. Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

4. Status of GaN-based green light-emitting diodes

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