Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332424
Reference50 articles.
1. Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
2. Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs
3. Performance degradation of small silicon devices caused by long-range Coulomb interactions
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