Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3418647
Reference18 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
3. InGaAs-GaAs quantum-dot lasers
4. Enhanced modal gain of multilayer InAs∕InGaAs∕GaAs quantum dot lasers emitting at 1300nm
5. Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers
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1. Ultrashort cavity length effects on the performance of GaInP multiple-quantum-well laser diode;Results in Optics;2023-07
2. Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths;Nanotechnology;2021-10-29
3. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers;CHIN J LASERS;2021
4. Evaluation of structural and microscopic properties of tetragonal ZrO2for the facet coating of 980 nm semiconductor laser diodes;Journal of Physics D: Applied Physics;2015-02-17
5. Ground-state lasing in high-power InAs/GaAs quantum dots-in-a-well laser using active multimode interference structure;Optics Letters;2014-12-22
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