Electric field dependence of hydrogen neutralization of shallow‐acceptor impurities in single‐crystal silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95961
Reference15 articles.
1. Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon
2. Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen
3. Hydrogen localization near boron in silicon
4. Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequency
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