Analytic modeling for the limit of mask mean-to-target from the photolithographic standpoint
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1713030
Reference5 articles.
1. Flare in Microlithographic Exposure Tools
2. Simulation of critical dimension error using Monte Carlo method and its experimental verification
3. Approach to critical dimension error budget analysis and specification estimation by the Monte Carlo method
4. Mask error factor: causes and implications for process latitude
5. Theoretical Calculation of Mask Error Enhancement Factor for Periodic Pattern Imaging
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of Mask Proximity Impact on Mask Mean-to-Target Specification;Japanese Journal of Applied Physics;2007-12-06
2. Analysis method to determine and characterize the mask mean-to-target and uniformity specification;22nd European Mask and Lithography Conference;2006-06-30
3. Explicit expression on specifications of mask mean to target and mask uniformity;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
4. Matching multiple-feature CD response from exposure tools: analysis of error sources with their impact in low-k1 regime;Optical Microlithography XVIII;2005-05-12
5. Imaging characteristics and specification of mask mean-to-target and mask uniformity according to polarization status;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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