Improved electrical properties of n-n and p-n Si/SiC junctions with thermal annealing treatment
Author:
Affiliation:
1. Electronic Information System, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
2. New Japan Radio Co., Ltd., Fukuoka 2-1-1, Fujimino, Saitama 356-8510, Japan
Funder
Core Research for Evolutional Science and Technology (CREST)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959072
Reference30 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Si Heterojunction Bipolar Transistors with Single‐Crystalline β ‐ SiC Emitters
3. Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
4. An investigation of 3C-SiC photoconductive power switching devices
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