Optical and compositional studies of SiN thin films with conventional and synchrotron radiation ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353379
Reference14 articles.
1. Preferential sputtering of Si3N4
2. Comparative study of the properties of ultrathin Si3N4films with Auger electron spectroscopy, spectroscopic ellipsometry, and Raman spectroscopy
3. Optical properties of AlxGa1−xAs
4. Modifications in α‐Si:H during thermal annealing:Insituspectroscopic ellipsometry
5. Growth and electronic properties of thin Si3N4films grown on Si in a nitrogen glow discharge
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1. VUV Ellipsometry;Handbook of Ellipsometry;2005
2. In situ and real-time spectroscopic ellipsometry studies;Handbook of Thin Films;2002
3. The Interband Transition Region: Amorphous and Microcrystalline Materials;Optical Properties of Crystalline and Amorphous Semiconductors;1999
4. The optical properties of a-C:H films between 1.5 and 10 eV and the effect of thermal annealing on the film character;Journal of Applied Physics;1996
5. The effect of hydrogen and temperature on the optical gaps of silicon nitride and comparative stoichiometry studies on SiN thin films;Journal of Non-Crystalline Solids;1995-07
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