Modifications in α‐Si:H during thermal annealing:Insituspectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349341
Reference22 articles.
1. Hydrogen desorption from crystalline silicon and its modification due to the presence of dislocations
2. Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous silicon
3. Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys
4. Small-Angle-Scattering Evidence of Voids in Hydrogenated Amorphous Silicon
5. Characterization of microvoids in device-quality hydrogenated amorphous silicon by small-angle x-ray scattering and infrared measurements
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1. Detailed review on c-Si/a-Si:H heterojunction solar cells in perspective of experimental and simulation;Microelectronic Engineering;2022-09
2. Spectroscopic ellipsometry studies on microstructure evolution of a-Si:H to nc-Si:H films by H2 plasma exposure;Materials Today Communications;2018-06
3. Optical spectra of six silicon phases;Semiconductors;2011-10
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