Activation characteristics of ion-implanted Si+ in AlGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1926422
Reference40 articles.
1. Ion implantation doping and isolation of GaN
2. Ca and O ion implantation doping of GaN
3. Ion‐implanted GaN junction field effect transistor
4. Annealing of ion implanted gallium nitride
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