Dielectric properties and relaxation behavior of the indium doped cadmium zinc telluride single crystal

Author:

Li Qiang,Fan Huiqing,Jie Wanqi,Peng Biaolin,Long Changbai

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Bias-induced relaxation phenomena in current temporal behaviors of CdZnTe radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-06

2. On the current transport mechanism in metal–semiconductor–metal structured CdZnTe radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-03

3. Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy;physica status solidi (b);2016-11-08

4. Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy;Micron;2016-09

5. Resistive switching properties in CdZnTe films;Applied Physics Letters;2015-02-09

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