Strain at the surface of GaN epilayers and at GaN/sapphire interface before and after laser lift-off (LLO) from the sapphire substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2836955
Reference19 articles.
1. Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate
2. Strain effects on excitonic transitions in GaN: Deformation potentials
3. Effects of compressive strain on optical properties of InxGa1−xN∕GaN quantum wells
4. Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on ($11 \bar{2}0$) and (0001) Sapphire Substrates
5. High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
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3. Temperature dependence of the piezotronic and piezophototronic effects in flexible GaN thin films;Nano Energy;2022-02
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