Influence of defects on electron–hole plasma recombination and transport in a nipi‐doped InxGa1−xAs/GaAs multiple‐quantum well structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359065
Reference40 articles.
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4. Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique;Journal of Applied Physics;1998-07-15
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