Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN∕GaN multiple and single quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2727437
Reference45 articles.
1. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Luminescences from localized states in InGaN epilayers
4. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
5. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
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