Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94798
Reference8 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
3. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures
4. Disorder of an AlAs‐GaAs superlattice by silicon implantation
5. Impurity induced disordering of strained GaP‐GaAs1−xPx(x∼0.6) superlattices
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1. Silicon impurity-induced layer disordering of AlGaN/AlN superlattices;Applied Physics Letters;2010-08-02
2. Diffusion of manganese in GaAs and its effect on layer disordering in AlxGa1−xAs‐GaAs superlattices;Applied Physics Letters;1991-09-02
3. Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures;Applied Physics Letters;1991-03-04
4. Characterization of III-V semiconductor materials by surface-sensitive analytical techniques. A review.;Analytical Sciences;1990
5. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures;Journal of Applied Physics;1988-12-15
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