Bipolar transistor with ion implanted, rapid thermal annealed base and semi‐insulating polycrystalline silicon emitter
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340986
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1. Electrical properties of LPCVD poly-silicon doped with oxygen atoms;Journal of Electronics (China);1993-04
2. Determination of acceptor binding energies in ZnSe;Journal of Crystal Growth;1992-02
3. Structure, properties, and thermal stability ofinsituphosphorus‐doped hydrogenated microcrystalline silicon prepared by plasma‐enhanced chemical vapor deposition;Applied Physics Letters;1991-04-15
4. Early stage evolution kinetics of the polysilicon/single‐crystal silicon interfacial oxide upon annealing;Journal of Applied Physics;1991-01-15
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