Early stage evolution kinetics of the polysilicon/single‐crystal silicon interfacial oxide upon annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347346
Reference18 articles.
1. High-performance transistors with arsenic-implanted polysil emitters
2. Effects of surface treatments on the electrical characteristics of bipolar transistors with polysilicon emitters
3. Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors
4. Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors
5. The effect of thin interfacial oxides on the electrical characteristics of silicon bipolar devices
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