Thermal stability of the Cu/Pd/Si metallurgy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102305
Reference8 articles.
1. Electrical and mechanical features of the platinum silicide‐aluminum reaction
2. Diffusion barriers in layered contact structures
3. Barrier layers: Principles and applications in microelectronics
4. Formation of palladium silicide in the presence of Al with and without a carbon barrier layer
5. Thermal stability of the Cu/PtSi metallurgy
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1. Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si Structure;Physica Scripta;1999
2. Diffusion barrier performance of thin Cr films in the Cu/Cr/Si structure;Materials Research Bulletin;1998-09
3. Copper metallization for ULSL and beyond;Critical Reviews in Solid State and Materials Sciences;1995-01
4. Thermal Stability of Cu / CoSi2 Contacted p+n Shallow Junction with and without TiW Diffusion Barrier;Journal of The Electrochemical Society;1994-10-01
5. Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide;MRS Bulletin;1994-08
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