Studies of the Si‐SiO2interface by MeV ion channeling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90983
Reference4 articles.
1. Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2Interface
2. Preparation of thin windows in silicon masks for x‐ray lithography
3. Calculation of the backscattering-channeling surface peak
4. Lattice Location by Channeling Angular Distributions: Bi Implanted in Si
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2. A New 3D Multistring Code to Identify Compound Oxide Nanophase With Ion Channeling;MRS Proceedings;2007
3. Atomic displacement free interfaces and atomic registry in SiO2∕(1×1) Si(100);Journal of Applied Physics;2006-11-15
4. Ion scattering simulations of theSi(100)−SiO2interface;Physical Review B;2006-08-15
5. Infrared spectroscopic analysis of an ordered Si/SiO2 interface;Applied Physics Letters;2004-01-26
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