Fermi energy control of vacancy coalescence and dislocation density in melt‐grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95355
Reference16 articles.
1. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
2. Creation of defects during the growth of semiconductor single crystals and films
3. Effect of doping on formation of dislocation structure in semiconductor crystals
4. Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystals
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4. Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth;Springer Handbook of Crystal Growth;2010
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