Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
Funder
U.S. Department of Defense (DOD)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/109/15/1.4964843.pdf?itemId=/content/aip/journal/apl/109/15/10.1063/1.4964843&mimeType=pdf&containerItemId=content/aip/journal/apl
Reference36 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
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4. Luminescence properties of erbium in III–V compound semiconductors
5. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
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