Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates
Author:
Affiliation:
1. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata, India
2. Department of Electronic Science, University of Calcutta, Kolkata, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5051310
Reference23 articles.
1. Nanoscale device modeling: the Green’s function method
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5. Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors
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