Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors-Reference-Cited by-同舟云学术

Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors

Published:2014-03-28 Issue:12 Volume:115 Page:124502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nag Chowdhury Basudev,Chattopadhyay Sanatan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4869495

Reference32 articles.

1. Roadmap for 22nm and beyond (Invited Paper)

2. From Si Source Gas Directly to Positioned, Electrically Contacted Si Nanowires: The Self-Assembling “Grow-in-Place” Approach

3. Epitaxial growth of silicon nanowires using an aluminium catalyst

4. Nanoelectronics from the bottom up

5. Development of ultra-high density silicon nanowire arrays for electronics applications

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