Analysis of the kinetics for interface state generation following hole injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1567059
Reference46 articles.
1. Lateral profiling of oxide charge and interface traps near MOSFET junctions
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5. Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field
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