Wavelength dependence of the threshold in an InGaP‐InAlGaP vertical cavity surface emitting laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112972
Reference13 articles.
1. Short-wavelength InGaAlP visible laser diodes
2. Electrically injected visible (639–661 nm) vertical cavity surface emitting lasers
3. Optical gain in a strained-layer quantum-well laser
4. A model for GRIN-SCH-SQW diode lasers
5. Effects of strain and Coulomb interaction on gain and refractive index in quantum-well lasers
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1. Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers;Semiconductor Science and Technology;2007-05-04
2. Optical gain in (Zn, Cd)Se–Zn(S, Se) quantum wells;Journal of the Optical Society of America B;1998-04-01
3. Spontaneous-emission-lifetime alteration inInxGa1−xAs/GaAs vertical-cavity surface-emitting laser structures;Physical Review B;1997-08-15
4. Carrier correlation effects in a quantum-well semiconductor laser medium;IEEE Journal of Selected Topics in Quantum Electronics;1997-04
5. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers;IEEE Journal of Quantum Electronics;1997
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