Spontaneous-emission-lifetime alteration inInxGa1−xAs/GaAs vertical-cavity surface-emitting laser structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.R4379/fulltext
Reference11 articles.
1. QUANTUM STATE CONTROL IN SEMICONDUCTOR pn-JUNCTIONS (II): CONTROLLED SPONTANEOUS EMISSION IN QUANTUM WELL MICROCAVITY LASERS
2. On the linewidth of microcavity lasers
3. Spontaneous emission factor of a microcavity DBR surface emitting laser. II. Effects of electron quantum confinements
4. Wavelength dependence of the threshold in an InGaP‐InAlGaP vertical cavity surface emitting laser
5. Semiconductor Microlaser Linewidths
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1. Quantum wires in multidimensional microcavities: Effects of photon dimensionality on emission properties;Physical Review B;2002-10-03
2. Simulation of spontaneous emission in apertured microcavities;SPIE Proceedings;2000-07-14
3. Quantum theory of spontaneous emission and coherent effects in semiconductor microstructures;Progress in Quantum Electronics;1999-11
4. Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures;Semiconductor Science and Technology;1999-07-26
5. Spontaneous emission lifetime of carriers in a semiconductor microcavity measured by photoluminescence without distortion by reabsorption;Optics Express;1999-06-21
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