Severe loss of dopant activity due to CHF3+CO2reactive ion etch damage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97399
Reference5 articles.
1. Plasma-Assisted Etching in Microfabrication
2. Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of Si
3. Ar ion beam and CCl4reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen
4. Reduction of apparent dopant concentration in the surface space charge layer of oxidized silicon by ionizing radiation
5. Atomic deuterium passivation of boron acceptor levels in silicon crystals
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