Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1915512
Reference17 articles.
1. Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals
2. Lanthanum-substituted bismuth titanate for use in non-volatile memories
3. Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition
4. Large remanent polarization of cerium-modified bismuth–titanate thin films for ferroelectric random access memories
5. Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories
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1. Effects of the Deposition Parameters on the Structural Properties of Highly Anisotropic Bi4-x Ndx Ti3O12 Films Synthesized by using Pulsed Laser Deposition;Journal of the Korean Physical Society;2020-11-19
2. Ferroelectric properties of Ce3+- doped Aurivillius K0.5Bi4.5Ti4O15 thin films;Journal of the Korean Physical Society;2017-09-27
3. The microstructure and ferroelectric properties of Sm and Ta-doped bismuth titanate ferroelectric thin films;Thin Solid Films;2013-02
4. Basic Process of Sputtering Deposition;Handbook of Sputtering Technology;2012
5. Effect of oxygen vacancy concentration on domain switching of Bi 3.15 Nd 0.85 Ti 3 O 12;EPL (Europhysics Letters);2011-04-14
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