Effect of oxygen vacancy concentration on domain switching of Bi 3.15 Nd 0.85 Ti 3 O 12-Reference-Cited by-同舟云学术

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Effect of oxygen vacancy concentration on domain switching of Bi 3.15 Nd 0.85 Ti 3 O 12

Published:2011-04-14 Issue:3 Volume:94 Page:37002
ISSN:0295-5075
Container-title:EPL (Europhysics Letters)
language:
Short-container-title:EPL

Author:

Huang H.,Zhong X. L.,Xie S. H.,Zhang Y.,Wang J. B.,Zhou Y. C.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1209/0295-5075/94/37002/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Significantly enhanced energy storage density and efficiency in flexible Bi_3.15Nd_0.85Ti₃O₁₂ thin film via periodic dielectric layers;Journal of Applied Physics;2022-03-21

2. Factors contributing to the local polar-structural heterogeneity and ultrahigh piezoelectricity in Sm-modified Pb(Mg1/3Nb2/3)O3–PbTiO3;Journal of Physics D: Applied Physics;2020-02-14

3. Effect of rare earth on dielectric properties of Mn contained unfilled tungsten bronze ceramics;Journal of Materials Science: Materials in Electronics;2019-08-26

4. Modulation of resistive switching characteristics for individual BaTiO3microfiber by surface oxygen vacancies;Journal of Physics D: Applied Physics;2017-12-18

5. Light controlled resistive switching and photovoltaic effects in ferroelectric 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 thin films;Journal of the European Ceramic Society;2017-02

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