Interface reactions of high-κ Y2O3 gate oxides with Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1406989
Reference9 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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3. Structure and stability of ultrathin zirconium oxide layers on Si(001)
4. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
5. Oxygen exchange and transport in thin zirconia films on Si(100)
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