In incorporation in GaInAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106817
Reference11 articles.
1. Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties
2. The effect of lattice mismatch on the dynamical microstructure of III–V compound surfaces
3. Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs
4. Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy
5. Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the determination of the structural parameters of GaxIn1−xAs/AlAsySb1−y superlattices by X-ray diffraction;Journal of Crystal Growth;2006-12
2. Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis;Journal of Crystal Growth;2000-04
3. Growth dynamics of by MBE;Journal of Crystal Growth;1997-05
4. In situ XPS investigation of indium surface segregation for Ga1−xInxAs and Al1−xInxAs alloys grown by MBE on InP(001);Surface Science;1996-05
5. Indium desorption from strained InGaAs/GaAs quantum wells grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
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