The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089687
Reference15 articles.
1. Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels
2. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications
3. Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaNp-njunction diodes
4. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes
5. Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes
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