Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices-Reference-Cited by-同舟云学术

Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

Published:2020-05-11 Issue:19 Volume:116 Page:193503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

López-Vidrier J.¹²^ORCID,Frieiro J. L.¹²^ORCID,Blázquez O.³^ORCID,Yazicioglu D.⁴^ORCID,Gutsch S.⁴^ORCID,González-Flores K. E.⁵^ORCID,Zacharias M.⁴^ORCID,Hernández S.¹²^ORCID,Garrido B.¹²^ORCID

Affiliation:

1. MIND, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, Martí i Franquès 1, E-08028 Barcelona, Spain

2. Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, Av. Diagonal 645, E-08028 Barcelona, Spain

3. Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 2 pl., E-08930 Sant Adrià del Besòs (Barcelona), Spain

4. Laboratory for Nanotechnology, IMTEK, Faculty of Engineering, University of Freiburg, Georges-Köhler-Allee 103, D-79110 Freiburg, Germany

5. Centro de Investigación en Materiales Avanzados S.C. (CIMAV), Unidad Monterrey–PIIT, Apodaca, NL M-66628, Mexico

Funder

Deutsche Forschungsgemeinschaft

Ministerio de Educación, Cultura y Deporte

Ministerio de Economía, Industria y Competitividad, Gobierno de España

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005069

Reference36 articles.

1. A non-filamentary switching action in thermally grown silicon dioxide films

2. Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

3. Electrochemical metallization memories—fundamentals, applications, prospects

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Light-activated resistance switching in SiOx RRAM devices

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