Light-activated resistance switching in SiOx RRAM devices-Reference-Cited by-同舟云学术

Light-activated resistance switching in SiOx RRAM devices

Published:2017-12-04 Issue:23 Volume:111 Page:233502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mehonic A.¹^ORCID,Gerard T.¹,Kenyon A. J.¹^ORCID

Affiliation:

1. Department of Electronic & Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, United Kingdom

Funder

RCUK | Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5009069

Reference22 articles.

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4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

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