Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation
Author:
Affiliation:
1. School of Advanced Materials Engineering, Kookmin University, Seoul 02707, South Korea
Funder
Korea Institute for Industrial Economics and Trade (KIET)
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4964606
Reference21 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
3. Single-layer MoS2 transistors
4. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
5. Phonon-limited mobility inn-type single-layer MoS2from first principles
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