Resolved structure in the quenching band of the EL2 center in GaAs, studied by infrared spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98964
Reference14 articles.
1. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
2. Intracenter transitions in the dominant deep level (EL2) in GaAs
3. Photoresponse of the EL2 absorption in undoped semi‐insulating GaAs
4. Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels
5. Metastability of the midgap levelEL2in GaAs: Relationship with the As antisite defect
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1. Analysis of transient phenomena in GaAs within the metastable model;physica status solidi (b);1996-06-01
2. STRUCTURE AND METASTABILITY OF THE EL2 DEFECT IN GaAs;International Journal of Modern Physics B;1995-05-15
3. Metastable transition of EL2 in GaAs: The electron-phonon-coupling channel;Solid State Communications;1994-02
4. Shallow donors and a fluctuating potential;Physica B: Condensed Matter;1993-02
5. A fluctuating potential and localization in semiinsulating GaAs;Solid State Communications;1992-10
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