Shallow donors and a fluctuating potential-Reference-Cited by-同舟云学术

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Shallow donors and a fluctuating potential

Published:1993-02 Issue:1-4 Volume:184 Page:403-408
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Karpierz K.,Łusakowski J.,Sadowski M.L.,Grynberg M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Optical properties of EL2

2. Electronic Properties of doped Semiconductors;Shklovskii,1984

3. Spatial distribution of residual shallow acceptors in undoped semi‐insulating GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Far-Infrared Magnetospectroscopy of Shallow Donors in Quantum Dots in CdTe/CdMgTe-Based Quantum Wells;Journal of the Korean Physical Society;2008-11-15

2. Potential fluctuations in CdTe epitaxial layers studied by shallow donor spectroscopy in the far infrared;Journal of Physics: Condensed Matter;2008-04-11

3. Inhomogeneous Broadening of Zeeman Absorption Peak of Shallow Donor in Semi-Insulating GaAs;Japanese Journal of Applied Physics;1999-11-15

4. FIR Magnetooptical Measurements on MOCVD Grown InAs;Acta Physica Polonica A;1997-10

5. Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs;Acta Physica Polonica A;1995-01

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