Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2961008
Reference16 articles.
1. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications
2. Solid-State Light Sources Getting Smart
3. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
4. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
5. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
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