Tunneling electroresistance of MgZnO-based tunnel junctions-Reference-Cited by-同舟云学术

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Tunneling electroresistance of MgZnO-based tunnel junctions

Published:2016-10-24 Issue:17 Volume:109 Page:173507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Belmoubarik Mohamed¹^ORCID,Al-Mahdawi Muftah¹^ORCID,Obata Masao²,Yoshikawa Daiki²,Sato Hideyuki¹,Nozaki Tomohiro¹,Oda Tatsuki²³,Sahashi Masashi¹

Affiliation:

1. Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan

2. Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan

3. Institute of Science and Engineering, Kanazawa University, Kanazawa 920-1192, Japan

Funder

kanazawa University SAKIGAKE Project

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966180

Reference41 articles.

1. Ferroelectric Memories

2. Applications of Modern Ferroelectrics

3. Ferroelectric tunnel junctions for information storage and processing

4. Emerging memories: resistive switching mechanisms and current status

5. Pulsed laser deposition of La1−xSrxMnO3: thin-film properties and spintronic applications

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