Optical characterization of GaAs/AlGaAs quantum well wires fabricated using arsenic implantation induced intermixing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367236
Reference22 articles.
1. Optical properties of wire and dot structures for photonic applications
2. Optical modeling of quantum wire arrays
3. Optical spectroscopy of ultrasmall structures etched from quantum wells
4. Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition
5. Fabrication of GaAs quantum wires (∼10 nm) by metalorganic chemical vapor selective deposition growth
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1. Optical losses in InGaAsP/InP QW intermixed waveguides for ZrO2 cap with and without F implantation;Optical and Quantum Electronics;2015-12-22
2. Effect of irradiation by He+ and Ga+ ions on the 2D-exciton susceptibility of InGaAs/GaAs quantum-well structures;physica status solidi (b);2015-04-11
3. Characterization and optimization of ion implantation for high spatial resolution quantum well intermixing in GaAs/AlGaAs superlattices;The European Physical Journal Applied Physics;2014-04
4. Optical transitions in AlGaAs/GaAs quantum wires on GaAs(631) substrates studied by photoreflectance spectroscopy;Physica E: Low-dimensional Systems and Nanostructures;2010-09
5. Contactless modulated reflectivity of quasi 0D self-assembled semiconductor structures;physica status solidi (a);2007-02
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