The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4745872
Reference59 articles.
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1. Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells;Applied Physics Letters;2023-10-30
2. Mid-infrared modulated photoluminescence mapping to investigate in-plane distributions of bandedge transitions in As-doped HgCdTe;Applied Physics Letters;2023-10-09
3. Stimulated emission in 24–31 μm range and «Reststrahlen» waveguide in HgCdTe structures grown on GaAs;Applied Physics Letters;2022-10-31
4. Calculation of Minority Carriers’ Lifetime in HgCdTe Structures by Using the Method Based on Mutual Correlation Between the Concentration of Electrical Particles;IEEE Transactions on Electron Devices;2022-04
5. Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells;Journal of Applied Physics;2021-12-07
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