Calculation of Minority Carriers’ Lifetime in HgCdTe Structures by Using the Method Based on Mutual Correlation Between the Concentration of Electrical Particles-Reference-Cited by-同舟云学术

Calculation of Minority Carriers’ Lifetime in HgCdTe Structures by Using the Method Based on Mutual Correlation Between the Concentration of Electrical Particles

Published:2022-04 Issue:4 Volume:69 Page:1995-2001
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jozwikowski K.¹^ORCID,Jozwikowska A.²,Markowska O.³

Affiliation:

1. Institute of Materials Science and Engineering, Military University of Technology, Warsaw, Poland

2. Faculty of Applied Informatics and Mathematics, Warsaw University of Life Science, Warsaw, Poland

3. Dell Sp. z o.o. ul, Warsaw, Poland

Funder

Wojskowa Akademia Techniczna

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09736440.pdf?arnumber=9736440

Reference48 articles.

1. A detailed calculation of the auger lifetime in p-type HgCdTe

2. Calculation of the Auger lifetime inp‐type Hg1‐xCdxTe

3. On the Auger Recombination Process in P-Type Lpe HgCdTe

4. The excess carrier lifetime in vacancy‐ and impurity‐doped HgCdTe

5. Minority carrier lifetime in doped and undoped p-type CdxHg1-xTe

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