Improvement of retention loss in Pb(Zr,Ti)O3 capacitors using Ir∕SrRuO3 top electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2135898
Reference14 articles.
1. Switching properties of Pb(Nb, Zr, Ti)O3 capacitors using SrRuO3 electrodes
2. Comparison of Retention Characteristics of Pb(Zr,Ti)O3 (PZT) Capacitors Fabricated with Noble Metal Electrodes and Their Oxide Electrodes
3. Retention characteristics of Pb(Zr, Ti)O3 films deposited by various methods for high-density non-volatile memory
4. Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes
5. Polarization retention in SrBi[sub 2]Ta[sub 2]O[sub 9] thin films investigated at nanoscale
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1. Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures;Journal of Applied Physics;2016-07-14
2. Effects of SrRuO3 Layer on Retention Properties of (Bi,Pr)(Fe,Mn)O3 Film Capacitor at High Temperature;ECS Solid State Letters;2015-03-05
3. Strain-induced improvement of retention loss in PbZr0.2Ti0.8O3 films;Applied Physics Letters;2015-02-16
4. Temperature dependence of ferroelectric properties and the activation energy of polarization reversal in (Pr,Mn)-codoped BiFeO3thin films;physica status solidi (b);2015-01-21
5. Reliability of Ferroelectric Multilayer PZT Thick Films Fabricated by Aerosol Deposition;Ferroelectrics;2014-10-03
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