Comparison of Retention Characteristics of Pb(Zr,Ti)O3 (PZT) Capacitors Fabricated with Noble Metal Electrodes and Their Oxide Electrodes-Reference-Cited by-同舟云学术

Comparison of Retention Characteristics of Pb(Zr,Ti)O3 (PZT) Capacitors Fabricated with Noble Metal Electrodes and Their Oxide Electrodes

Published:2004-01 Issue:1 Volume:64 Page:169-181
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

SHIN SANGMIN¹,CHO CHOONG RAE¹,KOO JUNE MO¹,KIM SUK PIL¹,CHO YOUNG-JIN¹,PARK SUNG-HO¹,LEE JUNG HYUN¹,PARK YOUNGSOO¹,LEE JUNE-KEY²,JO JI YOUNG³,KIM DONG JIK³,NOH TAE WON³,YOON JONG-GUL⁴,KANG BO SOO⁵

Affiliation:

1. a Materials & Devices Laboratory Samsung Advanced Institute of Technology , Suwon, Korea , 440-600

2. b Department of Materials Science and Engineering Chonnam National University , Kwangju, Korea , 500-757

3. c ReCOE and School of Physics Seoul National University , Seoul, Korea , 151-747

4. d Department of Physics University of Suwon , Kyunggi-do, Korea , 445-743

5. e Materials Science and Technology Division Los Alamos National Laboratory , Los Alamos, NM, 87544

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580490894177

Reference14 articles.

1. Sharma , A. K. 1997. “Semiconductor Memories,”, 387New York: IEEE.

2. Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures

3. Electrical properties of ferroelectric thin‐film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications

4. Effects of operating conditions on the fast‐decay component of the retained polarization in lead zirconate titanate thin films

5. Depolarization Characteristics in Sol-Gel Ferroelectric Pb(Zr0.4Ti0.6)O3 Thin-Film Capacitors

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