Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1736330
Reference19 articles.
1. Photoluminescence of quasi-direct transitions in disordered In/sub 1-x/Ga/sub x/P/graded GaP alloys
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
4. Highly strained quantum wells grown on GaP and on an buffer layer by gas-source molecular beam epitaxy
5. Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates
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1. Comparative Study of ∼2.05 eV Lattice-Matched and Metamorphic (Al)GaInP Solar Cells Grown by MOCVD;IEEE Journal of Photovoltaics;2018-11
2. Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-05
3. Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System;Nano Letters;2015-12-31
4. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers;Journal of Crystal Growth;2014-04
5. Surface photovoltage spectroscopy characterization of InGaPN alloys grown on GaP substrates;Journal of Physics: Condensed Matter;2007-02-13
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