Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1359781
Reference7 articles.
1. Evolution and Future Trends of SIMOX Material
2. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
3. Room‐temperature electroluminescence from Er‐doped crystalline Si
4. Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes
5. Anomalous temperature dependence of erbium-related electroluminescence in reverse biased silicon p–n junction
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